IRLB8748
Specifications
New and original Electronic Components with high quality and competitive price in stock,the most excellent aftersales service.Advanced HEXFET? Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-FreeDescription
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